← 返回 JSSC 论文列表JSSC 2010第12期Data ConvertersSiGe BiCMOS SOIPipeline ADC
A 16-Bit 100 to 160 MS/s SiGe BiCMOS Pipelined ADC With 100 dBFS SFDR
一款16位100至160 MS/s SiGe BiCMOS流水线ADC,具有100 dBFS SFDR。
16-bit, 100 to 160 MS/s, 100 dB SFDR, 77 dB SNR, 1.6 W
模数转换器SiGe BiCMOS流水线架构动态范围采样保持
▸创新点1:采样时刻调制方案的跟踪保持电路(电路创新)- 通过动态调整采样时钟的相位,有效抑制高频输入信号的非线性失真,显著提升SFDR至100 dBc,特别适用于160 MHz高采样率场景。
▸创新点2:提高第一子DAC输出阻抗的方案(电路创新)- 采用新型电流源结构及温度补偿技术,使DAC输出阻抗在信号摆幅和温度变化下保持稳定,确保16位精度下的线性度。
▸创新点3:开关电流信号处理方法(系统架构创新)- 利用SiGe BiCMOS工艺中高性能互补BJT的特性,实现高速电流开关操作,相比传统电压模式设计提升转换速度至160 MS/s。
▸创新点4:多电源域低功耗设计(系统创新)- 通过5V和3.3V双电源协同供电优化功耗分配,在1.6W总功耗下实现77dB SNR的高能效表现。
Abstract
This paper describes a 16-bit analog-to-digital converter designed in a complementary SiGe BiCMOS SOI process. The high-performance complementary BJTs lead to a switched-current approach to the signal processing. Although it uses a fairly traditional four-stage pipeline architecture, sev- eral techniques are incorporated to achieve 16 bits of distortion performance at a sample rate of up to 160 MHz. For improved high input frequency linearity we describe a track and hold with a sampling instant modulation scheme. For stability of the cur- rent-mode DAC over signal swing and temperature we describe a scheme to increase the output impedance of the first sub-DAC. At a sample clock frequency of 122 MHz, prototype silicon exhibits a spurious-free dynamic range of 100 dBc through the first two Nyquist zones and a signal-to noise ratio of 77 dB. With a 160 MHz sampling clock, the measured SFDR is better than 90 dBc and the SNR is better than 74.5 dB. The ADC dissipates 1.6 W from 5 V and 3.3 V supplies.