← 返回 JSSC 论文列表JSSC 2010第12期RF & Wireless0.12μm SiGe BiCMOS
A Fully Integrated 16-Element Phased-Array Transmitter in SiGe BiCMOS for 60-GHz
一款基于SiGe BiCMOS工艺的60GHz全集成16单元相控阵发射器
60.48GHz下每单元输出9-13.5dBm，总功耗3.8-6.2W
毫米波相控阵SiGe BiCMOS波束成形802.15.3c
▸创新点1：采用滑动中频两步上变频架构，通过集成频率合成器和I/Q平衡校正技术，实现了40 dB的增益可编程性，显著提高了信号处理的灵活性和系统性能。
▸创新点2：混合无源/有源功率分配树设计，通过优化功率分配网络的实现，解决了高频信号分配中的损耗问题，同时保持了系统的紧凑性和高效性。
▸创新点3：集成数字控制单元实现快速波束成形，通过高速并行接口和前端集成存储器阵列，实现了快速波束转向和精确的相位控制，相位偏移范围达360度。
▸创新点4：可变增益三级功率放大器设计，通过偏置控制实现增益可调，每个前端输出功率在60.48 GHz时达到9至13.5 dBm，支持多通道通信需求。
Abstract
A phased-array transmitter (TX) for multi-Gb/s
non-line-of-sight links in the four frequency channels of the IEEE
802.15.3c standard (58.32 to 64.8 GHz) is fully integrated in a
0.12-
m SiGe BiCMOS process. It consists of an up-conversion
core followed by a 1:16 power distribution tree, 16 phase-shifting
front-ends, and a digital control unit. The TX core is a two-step
sliding-IF up-conversion chain with frequency synthesizer that
features 40 dB of gain programmability, I/Q balance and LO
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