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JSSC 2010第12期RF & Wireless65nm

A Fully Integrated 2 1 Dual-Band Direct-Conversion Mobile WiMAX Transceiver With

65nm CMOS工艺的全集成双频段移动WiMAX收发器,采用新型分数分频器和噪声整形TIA。
65nm CMOS, 低波段接收功耗214.1mW, 高波段接收功耗247.7mW, 低波段噪声系数3.8dB, 高波段噪声系数4.5dB
双频段收发器直接转换分数分频器噪声整形WiMAX
采用‘先分布后分数’的频率规划方案
新型紧凑型双模分数分频器
噪声整形跨阻放大器(TIA)抑制闪烁噪声
Abstract
ing Transimpedance Amplifier in 65 nm CMOS Jun Deguchi, Member , IEEE, Daisuke Miyashita , Member , IEEE, Y osuke Ogasawara, Gaku Takemura, Masaomi Iwanaga, Kenichi Sami, Rui Ito, Junji Wadatsumi, Y uki Tsuda, Shoko Oda, Shunji Kawaguchi, Nobuyuki Itoh, Member , IEEE, and Mototsugu Hamada , Member , IEEE Abstract—This paper presents a fully integrated 2 RX 1 TX dual-band direct-conversion mobile WiMAX transceiver in a 65 nm CMOS technology. The frequency division ratios of 4 for the low band (2.