Abstract
ng Lee, Wonsun Park, Y ongdeok Cho, Chaekyu Jang,
Chulwoo Y ang, Sanghwa Chung, In-Suk Y un, Byoungin Joo, Byoungkwan Jeong, Jeeyul Kim, Jeakwan Kwon,
Hyunjong Jin, Y ujong Noh, Jooyun Ha, Moonsoo Sung, Daeil Choi, Sanghwan Kim, Jeawon Choi, Taeho Jeon,
Heejoung Park, Joong-Seob Y ang, and Y o-Hwan Koh
Abstract—Novel program and read schemes are presented to
break barriers in scaling of NAND flash memory such as threshold
voltage endurance from floating gate interference, and charge loss
tolerance