← 返回 JSSC 论文列表JSSC 2011第2期Other0.18μmBandgap Reference
A 2.6 nW, 0.45 V Temperature-Compensated Subthreshold CMOS V oltage Reference Luca Magnelli, Felice Crupi
一种在弱反型区工作的0.45V超低功耗CMOS基准电压源
257.5mV基准电压，5.8nA电流，165ppm/°C温漂
基准电压源弱反型温度补偿超低功耗CMOS
▸创新点1：全晶体管弱反型偏置设计（方法创新） - 所有晶体管均工作在弱反型区，显著降低功耗至26nW，同时保持基准电压稳定性，解决了传统强反型设计的高功耗问题
▸创新点2：利用阈值电压差产生基准（电路创新） - 通过精确匹配不同晶体管的阈值电压差生成257.5mV基准，无需传统带隙基准结构，实现0.44%/V的线路灵敏度
▸创新点3：0.45V超低工作电压（系统创新） - 采用亚阈值优化技术使电路在0.45-1.8V宽电源范围内工作，突破常规电压参考电路的最低工作电压限制
▸创新点4：温度补偿技术（电路创新） - 在0-125°C范围内实现165ppm/°C的温度系数，通过亚阈值区特性补偿温度漂移，标准差仅100ppm/°C
Abstract
A voltage reference circuit operating with all transis- tors biased in weak inversion, providing a mean reference voltage of 257.5 mV , has been fabricated in 0.18 m CMOS technology. The reference voltage can be approximated by the difference of transistor threshold voltages at room temperature. Accurate sub- threshold design allows the circuit to work at room temperature with supply voltages down to 0.45 V and an average current con- sumption of 5.8 nA. Measurements performed over a set of 40 sam- ples showed an average temperature coefficient of 165 ppm/ C with a standard deviation of 100 ppm/ C, in a temperature range from 0 to 125 C. The mean line sensitivity is 0.44%/V , for supply voltages ranging from 0.45 to 1.8 V. The power supply rejection ratio measured at 30 Hz and simulated at 10 MHz is lower than 40 dB and 12 dB, respectively. The active area of the circuit is 0.043 mm /50.