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JSSC 2011第4期Power Management0.6μm BiCMOS

A 784 dB Photo-Sensitivity Dynamic Range 285 T 10Hz Transimpedance Bandwidth Pro

介绍了一种用于光学存储系统的0.6μm BiCMOS技术光传感器,具有高动态范围和宽带宽。
78.4 dB动态范围, 285 TΩHz transimpedance带宽积, 463 MHz带宽, 9.1 mW功耗
BJT跨线性环光传感器光学存储系统光电集成电路跨阻放大器
采用BJT跨线性环电压控制电流放大器
单片集成PIN光电二极管和电流电压转换器
实现高动态范围和宽带宽
Abstract
Systems Nikˇsa Tadic´, Member , IEEE, Milena Zogovic´, Wolfgang Gaberl, and Horst Zimmermann , Senior Member , IEEE Abstract—An optical sensor with variable transimpedance for optical storage systems in 0.6 m BiCMOS technology is pre- sented. A PIN photodiode, a voltage-controlled current amplifier, and a current-to-voltage converter are monolithically integrated. A balanced type of the BJT translinear loop based voltage-con- trolled current amplifier is used. A linearity error smaller than 3.6%,