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A Compact, Low-Power 40-GBit/s Modulator Driver With 6-V Differential Output Swing in 0.25- mS i G eB i C M O S Christian Knochenhauer, J.
一种采用改进击穿电压倍增器拓扑的低功耗40Gbits调制驱动器，具有6V差分输出摆幅。
0.25μm SiGe BiCMOS, 13dB差分增益, 33.7GHz带宽, 6Vpp差分输出, 1.35W功耗
调制驱动器低功耗高带宽SiGe BiCMOS电压倍增器
▸改进击穿电压倍增器(BVD)拓扑
▸多频补偿方法提升速度并降低功耗
▸结合小信号和大信号分析的优化方法
Abstract
This paper presents a high-speed, l ow-power modu- lator driver featuring a novel modi fied breakdown voltage doubler (BVD) topology. Further speed enhancement and reduction of power consumption is achieved by multi ple frequency compen- sation methods. An optimization method combining small and large-signal analyses is presen ted. The driver was fabricated in a 0.25- m SiGe BiCMOS technology with of up to 180 GHz. It features 13-dB differential gain, a small-signal bandwidth of 33.7 GHz and delivers a single-ended output swing of 3 Vpp (6 Vpp differential) at 40 GBit /s into a 50- load consuming only 1.35 W of DC power.