Unipolar Organic Transistor Circuits Made Robust by Dual-Gate Technology Kris Myny, Student Member , IEEE, Monique J. Beenhakkers, Nick A. J. M. van Aerle, Gerwin H. Gelinck

Abstract

Dual-gate organic transistor technology is used to increase the robustness of digital circuits as illustrated by higher inverter gains and noise margins. The additional gate in the technology functions as a -control gate. Both zero- -load and diode-load logic are investigated. The noise margin of zero- -load inverter increases from 1.15 V (single gate) to 2.8 V (dual gate) at 20 V supply voltage. Diode-load logic inverters show an improvement in noise margin from 0Vt o0 . 7Vf o rs i n g l e gate and dual gate inverters, respectively. These values can be increased signi ficantly by optimizing the inverter topologies. As a result of this optimization, noise margins larger than 6 V for zero- -load logic and 1.4 V for diode-load logic are obtained. Functional 99-stage ring oscillators with 2.27 s stage delays and 64 bit organic RFID transponder c hips, operating at a data rate of 4.3 kb/s, have been manufactured.