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Unipolar Organic Transistor Circuits Made Robust by Dual-Gate Technology Kris My
双栅有机晶体管技术提升数字电路鲁棒性，实现更高反相器增益和噪声容限。
20V供电电压下噪声容限>6V(零负载)/1.4V(二极管负载)，99级环形振荡器级延迟2.27μs
双栅晶体管有机电子噪声容限数字电路RFID
▸双栅技术作为控制栅提升电路稳定性
▸零负载逻辑噪声容限从1.15V提升至2.8V
▸二极管负载逻辑噪声容限优化至1.4V
Abstract
Dual-gate organic transistor technology is used to
increase the robustness of digital circuits as illustrated by higher
inverter gains and noise margins. The additional gate in the
technology functions as a -control gate. Both zero- -load
and diode-load logic are investigated. The noise margin of
zero- -load inverter increases from 1.15 V (single gate) to 2.8 V
(dual gate) at 20 V supply voltage. Diode-load logic inverters show
an improvement in noise margin from
0Vt o0 . 7Vf o rs i n g l e
gate