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A 300-GHz Fundamental Oscillator in 65-nm CMOS Technology
65nm CMOS工艺下实现300GHz基本振荡器，采用输出级反馈至核心的创新拓扑结构。
65nm CMOS, 0.8V, 3.7mW, 300GHz
载波生成频率生成毫米波振荡器螺旋电感传输线
▸采用输出级反馈至核心的振荡器拓扑结构
▸通过仿真与传统交叉耦合对电路进行比较
▸在65nm CMOS工艺下实现高频振荡
Abstract
xistence of gain at
high frequencies, revealing the speed limitations of other circuits
in a given technology. This paper presents an oscillator topology
that employs feedback from an output stage to the core, thus
achieving a high speed. The behavior of the proposed oscillator
is formulated and simulations are used to compare it with the
conventional cross-coupled pair circuit. Three prototypes realized
in 65-nm CMOS technology operate at 205 GHz, 240 GHz, and
300 GHz, each drawing 3.7 mW from