A Large 27V8472VDD Tolerant Zigzag 8T SRAM With Area-Efficient Decoupled Differen

Abstract

Nanometer SRAM cannot achieve lower VDDmin due to read-disturb, half-select disturb and write failure. This paper demonstrates quantitative performance advantages of a zigzag 8T-SRAM (Z8T) cell over the decoupled single-ended sensing 8T-SRAM (DS8T) with write-back schemes, which was previously recognized as the most area-efficient cell under large /86/84/72 /86/68/68conditions. Since Z8T uses only 1T for each de- coupled read-port, faster 2T differential sensing (D /50S) can be implemented within