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JSSC 2011第6期Medical & Bio0.6μmNeural Interface

A Micropower Low-Noise Neural Recording Front-End Circuit for Epileptic Seizure Detection Chengliang Qian, Student Member , IEEE

本文提出了一种用于癫痫快速波纹记录的微功耗低噪声神经前端电路。
0.6μm CMOS, 2.8V, 4.5μW
微功耗低噪声神经前端电路癫痫快速波纹带通滤波器
创新点1:电流分流技术与输出分支电流缩放技术结合(电路创新)。该技术通过优化折叠共源共栅放大器结构,显著改善了噪声与功耗的权衡关系,使前置放大器在仅消耗2.4μW功率下实现3.07μV总输入参考噪声,噪声效率因子(NEF)低至3.09,达到行业领先水平。
创新点2:6阶前馈反馈椭圆带通滤波器设计(电路创新)。该滤波器采用独特的拓扑结构,提供陡峭的带外衰减特性(dB/decade),精确捕捉250-486Hz的癫痫快速波纹(FR)信号,同时有效抑制带外干扰,系统总增益达38.5dB。
创新点3:首次实现癫痫快速波纹(FR)记录功能(系统创新)。作为首个针对FR信号优化的检测系统,其前端电路在4.5μW超低功耗下实现2.48μV输入参考噪声,NEF为7.6,填补了高频神经信号记录的技术空白。
创新点4:集成化低功耗设计(系统创新)。采用标准0.6μm CMOS工艺实现,芯片面积仅0.45mm²,整合了片上稳压器电路,为2.8V供电系统提供稳定电源管理,显著提升系统便携性与实用性。
Abstract
This paper describes a micropower low-noise neural front-end circuit capable of recording epileptic fast ripples (FR). The front-end circuit consisting of a preampli fier followed by a 6th-order bandpass filter is designed for signal sensing in a fu- ture epileptic deep brain stimulat or. A current-spli tting technique is combined with an output-branch current scaling technique in a folded-cascode amplifier structure to improve the noise and power tradeoff in the preamplifier. In measurements, the preamplifier ex- hibits 39.4 dB DC gain, 0.36 Hz to 1.3 kHz of dB bandwidth, and 3.07 total input-referred noise while consuming 2.4 W from a 2.8 V power supply provided by an on-chip regulator circuit. A noise ef ficiency factor (NEF) of 3.09 is achieved with minimal power consumption and is one of the lowest published to date. The 6th-order follow-the- leader feedback elliptic bandpass filter passes FR signals and provides dB/decade attenuation to out-of-band frequency compone nts. In measurements, the en- tire front-end circuit achieves a mid-band gain of 38.5 dB, a band- width from 250 to 486 Hz, and a total input-referred noise of 2.48 while consuming 4.5 W from the 2.8 V power supply. The front-end NEF achieved is 7.6. To the authors’ knowledge, the pro- posed epileptic seizure- detection system is the first to achieve the FR-recording functionality. Th ec h i pi sf a b r i c a t e di nas t a n d a r d 0.6 m CMOS process. Die size is 0.45 mm .