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JSSC 2011第6期RF & Wireless65nm

Analysis and Design of Small-Signal Polar Transmitters for

分析并设计用于蜂窝应用的小信号极性发射机,解决电路缺陷提升性能。
65nm CMOS, 8PSK 400 kHz调制频谱64/63 dBc, RMS EVM 2.5/2.0%
极性发射机蜂窝应用GSM/EDGE/WCMA电路缺陷性能优化
详细分析直接调制和小信号极性发射机
讨论关键非理想性并提供电路和架构解决方案
展示65nm CMOS工艺下的EDGE发射机原型
Abstract
In cellular applications, open-loop small-signal polar transmitters offer several advantages such as low power consump- tion and small silicon area. However, due to their complexity, circuit imperfections can severely affect performance, potentially rendering them impractic al to meet the challeng ing cellular transmitter requirements. In this paper a detailed analysis of the direct-modulated and small-signal polar transmitters for GSM/EDGE/WCMA applications are provided fo llowed by some case studies. Several key non-idealities will be discussed and circuit level as well as architectural remedies for each will be presented. A prototype EDGE transmitter fabricated i n6 5n mC M O Sw i t h an 8PSK 400 kHz modulation spectrum of 64/63 dBc for high/low bands, and an RMS EVM of 2.5/2.0% will be discussed.