JSSC 2011第7期RF & Wireless65nm

A 65-nm CMOS Temperature-Compensated Mobility-Based Frequency Reference for Wire

65nm CMOS工艺下基于电子迁移率的温度补偿频率参考源

150kHz, 0.2mm², 42.6μA@1.2V

CMOS频率参考源温度补偿电子迁移率无线传感器网络

▸基于MOS晶体管电子迁移率的温度补偿

▸两点修调后频率偏差小于0.5%

▸适用于无线传感器网络节点

Abstract

A temperature-compensat ed CMOS frequency refer- ence based on the electron mobility in a MOS transistor is pre- sented. Over the temperature range from C to 125 C, the frequency spread of the complete reference is less than 0.5% after a two-point trim and less than 2.7% after a one-point trim. These results make it suitable for use in Wireless Sensor Network nodes. Fabricated in a baseline 65-nm CMOS process, the 150 kHz frequency reference occupies 0.2 mm and draws 42.6 Af r o ma 1.2-V supply