← 返回 JSSC 论文列表JSSC 2011第8期Data Converters65nmFlash ADC
Exploiting Combinatorial Redundancy for Offset Calibration in Flash ADCs Gokce K
利用组合冗余技术校准Flash ADC中的偏移误差,提升制造后的校准效率。
8-bit, 1.5 GS/s, 37 db SNDR, 35 mW总功耗
Flash ADC偏移校准组合冗余统计元件选择65nm CMOS
▸采用统计元件选择(SES)方法
▸利用组合冗余校准偏移
▸在65nm CMOS工艺中实现高精度比较器阵列
Abstract
Process variations in advanced CMOS nodes limit the
benefits of scaling for analog designs. I nt h ep r e s e n c eo fi n c r e a s i n g
random intra-die variations, mismatch becomes a signi ficant de-
sign challenge for circuits such ascomparators. In this paper we de-
scribe and demonstrate the details of a statistical element selection
(SES) methodology that relies on the combinatorial growth of sub-
sets of selectable circuit elements (e.g., input transistors in a com-
parator) to provide red