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JSSC 2011第9期Clocking & PLLsSiGe技术(300GHz HBTs)VCO

A 122-GHz SiGe-Based Signal-Generation Chip Employing a Fundamental-Wave Oscillator With Capacitive Feedback Frequency-Enhancement Martin Jahn, Student Member , IEEE,H e r b e r t K n a p p, Member , IEEE

本文介绍了一种基于SiGe技术的122GHz信号生成芯片,采用基本波振荡器和电容反馈结构实现高频振荡和宽调谐范围。
输出频率122GHz,调谐范围16GHz,相位噪声-95dBc/Hz@1MHz偏移
信号生成SiGe技术基本波振荡器电容反馈高频振荡
采用基本波电压控制振荡器(VCO)结构
电容反馈结构支持高频振荡和宽调谐范围
集成输出缓冲器和可配置分频器
Abstract
This paper presents a highly integrated and fully balanced signal generation block comprising a fundamental-wave voltage-controlled oscillator (VCO), an output buffer, and a con- figurable frequency divider stage (prescaler). The VCO introduces a negative resistance structure in conjunct ion with capacitive cross-coupling. This compound structure allows fundamental oscillation to be sustained at high frequencies while providing wide tuning ranges. The capabilities of th e capacitive feedback were analyzed using a linear tra nsistor model, and boundary conditions, which support the early design phase, were derived. The chip was fabricated in a SiGe tec hnology with 300-GHz HBTs. The output frequency of the monolithic microwave integrated circuit is centered at 122 GHz and provides a tuning range of 16 GHz at an average singl e-sideband phase noise of 95 dBc/Hz at 1 MHz offset frequency. Possible applications include ISM applications at 122 GHz and sh ort-range radar systems with wide tuning ranges.