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JSSC 2011第9期Digital Circuits0.5μm BiCMOSNeural Network Accelerator

A Single-Temperature Trimming Technique for MOS-Input Operational Ampli fiers Ach

提出一种基于单温度测量的MOS输入运算放大器偏移和漂移校准技术
最大偏移漂移0.33°C (3σ), 工作温度范围0°C至100°C
运算放大器偏移校准温度漂移MOS差分对单温度测量
可重构输入级实现单温度下的偏移和漂移校准
通过偏置电流变化预测MOS差分对的漂移特性
理论分析与实验验证相结合的校准方法
Abstract
A MOS-input operational ampli fier has a recon fig- urable input stage that enables trimming of both offset and offset drift based only on single-tempera ture measurements. The input stage consists of a MOS differential pair, whose offset drift is pre- dicted from offset voltage measurements made at well-de fined bias currents. A theoretical motivat ion for this approach is presented and validated experimentally by characterizing the offset of pairs of discrete MOS transistors as a function of bias