← 返回 JSSC 论文列表JSSC 2011第10期Data Converters65nmNeural Network Accelerator
A Miniature 2 mW 4 bit 1.2 GS/s Delay-Line-Based ADC in 65 nm CMOS Y ahya M. Tousi, Member , IEEE
提出一种基于延迟线的高速4位12GS/s ADC,采用65nm CMOS工艺,功耗2mW。
4位12GS/s, 1.2V, 2mW, SNDR 20.4dB
延迟线ADC高速转换低功耗65nm CMOS量化噪声
▸创新点1:基于延迟线的ADC结构(方法创新),通过将采样输入电压转换为延迟来控制数字脉冲的传播速度,实现高速模拟到数字转换,显著提升了ADC的速度和效率。
▸创新点2:在噪声和失配下更高效(系统创新),利用延迟线的平均机制,有效减少了量化噪声、抖动和失配的影响,在深亚微米CMOS工艺中表现出更高的功率效率。
▸创新点3:无需校准或后处理(电路创新),设计实现了196 fJ/转换步的低功耗,且无需任何校准或后处理步骤,简化了系统复杂性并降低了成本。
▸创新点4:高性能指标(系统创新),在1.2 GS/s的采样率下,实现了20.4 dB的SNDR,INL和DNL分别低于0.8位和0.5位,展示了其在高精度应用中的潜力。
Abstract
A delay-line-based analog-to-digital converter for high-speed applications is introduced. The ADC converts the sampled input voltage to a delay that controls the propagation velocity of a digital pulse. The output digital code is generated based on the propagation length of the pulse in a fixed time window. The effects of quantization noise, jitter, and mismatch are discussed. We show that because of the averaging mechanism of the delay-line, this structure is more power ef ficient in the presence of noise and mismatch in deep sub-micron CMOS. To show the feasibility of this approach, a 4 bit 1.2 GS/s ADC is d e s i g n e da n df a b r i c a t e di n6 5n mC M O Si na na c t i v ea r e ao f 110 m 105 m. The measured INL and DNL of the ADC are below 0.8 bits and 0.5 bits and it achieves an SNDR of 20.4 dB at Nyquist rate. This del ay-line-based ADC consumes 2m Wo f power from a 1.2 V supply resulting in 196 fJ/conversion step without using any calibra tion or post-processing.