← 返回 JSSC 论文列表JSSC 2011第10期RF & Wireless0.18μm SiGe BiCMOSLNAmm-Wave PA
Design and Analysis of a W-Band SiGe Direct-Detection-Based Passive Imaging Rece
介绍了一种基于0.18μm SiGe BiCMOS工艺的W波段直接检测无源成像接收器前端设计。
20-43 MV/W响应度，26 GHz带宽，200 mW功耗，0.4 K NETD
W波段无源成像直接检测SiGeDicke开关
▸采用嵌入式Dicke开关的平衡LNA设计
▸低噪声前端架构
▸硅基单芯片解决方案替代复合半导体多芯片模块
Abstract
A W-band direct-detection -based receiver front-end
for millimeter-wave passive imaging in a 0.18- mB i C M O S
process is presented. The proposed system is comprised of a
direct-detection front-end architecture employing a balanced
LNA with an embedded Dicke switch, power detector, and base-
band circuitry. The use of a balanced LNA with an embedded
Dicke switch minimizes front-end noise figure, resulting in a
great imaging resolution. The receiver chip achieves a measured
responsivity of 20–43