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InP HBT IC Technology for Terahertz Frequencies: Fundamental Oscillators Up to 0.57 THz
开发0.25微米InP HBT IC技术，支持太赫兹频段（0.3-3 THz）振荡器设计。
0.25μm InP HBT, 800GHz fT, 4V BVCEO, 输出功率6.2-19.2 dBm
InP HBT太赫兹振荡器差分调谐亚谐波混频器
▸创新点1：0.25微米InP HBT晶体管技术（方法创新） - 该技术实现了800 GHz的截止频率（fT）和4 V的共射极击穿电压（BVCEO），在THz频段（0.3-3 THz）提供了高性能的晶体管基础，同时集成了三级互连和背面处理技术。
▸创新点2：差分串联调谐拓扑振荡器设计（电路创新） - 采用差分串联调谐拓扑结合共基极缓冲器的设计，实现了高达0.57 THz的振荡频率，输出功率分别为6.2 dBm（310.2 GHz）、5.6 dBm（412.9 GHz）和19.2 dBm（573.1 GHz）。
▸创新点3：集成亚谐波下变频混频器（系统创新） - 在400 GHz振荡器设计中集成了亚谐波下变频混频器，简化了高频频谱测量，提升了系统测试的便捷性和准确性。
▸创新点4：变容管调谐设计（电路创新） - 变容管调谐方案实现了10.6-12.3 GHz的调谐带宽，适用于高达300 GHz的频率范围，展示了优异的频率可调性。
Abstract
We report on the development of a 0.25- mI n P HBT IC technology for lower end of the THz frequency band (0.3–3 THz). Transistors demonstrate an extrapolated of 800 GHz while maintaining a common-emitte rb r e a k d o w n voltage (BVCEO) 4 V. The transistors have been integrated in a full IC process that includes thre e-levels of interconnects, and backside processing. The technology has been utilized for key circuit building blocks (ampli fiers, oscillators, frequency dividers, PLL, etc), all operating at 300 GHz. Next, we report a series of fundamental o scillators operating up to 0.57 THz fabricated in a 0.25- m InP HBT technology. Oscil- lator designs are based on a differential series-tuned topology fol- lowed by a common-base buffer, in a fixed-frequency or varactor- tuned scheme. For 400 GHz designs, a subharmonic down-con- version mixer is integrated to facilitate spectrum measurement. At optimum bias, the measured ou tput power was 6.2, 5.6, and 19.2 dBm, for 310.2-, 412.9-, and 573.1-GHz designs, re- spectively, with 115 mW. Varactor-tuned designs demon- strated 10.6–12.3 GHz of tu ning bandwidth up to 300 GHz.