Metamorphic HEMT MMICs and Modules Operating Between 300 and 500 GHz Axel Tessmann, Arnulf Leuther, V olker Hurm, Ingmar Kallfass, Hermann Massler, Michael Kuri, Markus Riessle, Martin Zink, Rainer Loesch, Matthia s Seelmann-Eggebert, Michael Schlechtweg, and

Abstract

In this paper, we present the development of sub- millimeter-wave monolithic integrated circuits (S-MMICs) and modules for use in next-generation sensors and high-data-rate wireless communication systems, operating in the 300–500-GHz frequency regime. A four-stage 460-GHz ampli fier MMIC and a 440-GHz class-B frequency doubler c ircuit have been successfully realized using our 35-nm InAlAs/InGaAs-based metamorphic high-electron mobility transis tor (mHEMT) technology in com- bination with grounded coplanar circuit topology (GCPW). Additionally, a 500-GHz ampli fier MMIC was fabricated using a more advanced 20-nm mHEMT technology. To package the submillimeter-wave circuits, a set of waveguide-to-microstrip transitions has been fabricated on both 50- m-thick quartz and GaAs substrates, covering the frequency range between 220 and 500 GHz. The E-plane probes were integrated in a four-stage 20-nm cascode ampli fier circuit to realize a full -band (220 to 325 GHz) S-MMIC ampli fier module with monolithically inte- grated waveguide transitions.