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Metamorphic HEMT MMICs and Modules Operating Between 300 and 500 GHz Axel Tessma
开发300-500GHz频段的亚毫米波单片集成电路和模块，用于新一代传感器和高速无线通信系统。
460GHz放大器、440GHz倍频器、500GHz放大器
亚毫米波单片集成电路mHEMT技术放大器倍频器
▸35-nm InAlAs/InGaAs基mHEMT技术
▸接地共面波导电路拓扑结构
▸集成波导过渡的全频带S-MMIC放大器模块
Abstract
In this paper, we present the development of sub-
millimeter-wave monolithic integrated circuits (S-MMICs) and
modules for use in next-generation sensors and high-data-rate
wireless communication systems, operating in the 300–500-GHz
frequency regime. A four-stage 460-GHz ampli fier MMIC and a
440-GHz class-B frequency doubler c ircuit have been successfully
realized using our 35-nm InAlAs/InGaAs-based metamorphic
high-electron mobility transis tor (mHEMT) technology in com-
bination with grounde