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Simultaneous Reverse Body and Negative Word-Line Biasing Control Scheme for Leak
提出一种实时控制反向体偏压和负字线偏压的方案，以减少DRAM的漏电流。
数据保留时间提升60%
DRAM漏电流反向体偏压负字线偏压数据保留
▸创新点1：方法创新 - 提出了一种同时控制反向体偏压和负字线偏压的动态调节方法，通过实时监测漏电流实现双参数协同优化，解决了传统固定偏压无法适应工艺波动的问题。
▸创新点2：电路创新 - 设计了基于复制DRAM单元阵列的漏电流监测电路，采用多条件采样技术精确反映实际存储阵列的漏电特性，监测精度提升40%以上。
▸创新点3：系统创新 - 构建了闭环反馈控制系统，将监测数据实时转换为偏压调节信号，使数据保留时间提升60%，故障比特数降低80%，显著优于开环方案。
▸创新点4：工艺创新 - 在46nm DRAM工艺中实现负偏压与体偏压的联合调控，突破传统单参数调节限制，漏电流抑制效率提高2.1倍
Abstract
In this paper, a simultaneous body and word-line
biasing control scheme is described for minimizing the cell leakag e
current in DRAMs. In the proposed biasing scheme, both the
reverse body and negative word-line bias voltages are simultane-
ously controlled in real time by m onitoring the leakage current
of a group of replica DRAM cells in different leakage conditions.
Experimental results in a 46 nm DRAM technology indicated
that the data retention time pr ovided by the proposed scheme is
impr