A 30 Gb/s/Link 2.2 Tb/s/mm Inductively-Coupled Injection-Locking CDR for High-Speed DRAM Interface

Abstract

This paper presents a 30 Gb/s/link 2.2 Tb/s/mm in- ductive-coupling link for a high-speed DRAM interface. The data rate per layout area is the highest among DRAM interfaces re- ported up to now. The proposed interface employs a high-speed injection-locking CDR technique t hat utilizes the derivative prop- erty of inductive coupling. Compared to conventional injection- l o c k i n gC D Rb a s e do na nX O Re d g edetector, the proposed tech- nique doubles the operation speed and increases the data rate to 30 Gb/s/link. As a result, the data rate per layout area is increased to 2.2 Tb/s/mm , which is 2X that of the state-of-the-art induc- tive-coupling link, and 22X that of the state-of-the-art wired link.