JSSC 2011第11期Clocking & PLLsDRAM

A 30 GbsLink 22 Tbsmm Inductively-Coupled Injection-Locking CDR for High-Speed D

提出一种30 Gb/s/链路的2.2 Tb/s/mm电感耦合高速DRAM接口，采用注入锁定CDR技术提升速度。

30 Gb/s/link, 2.2 Tb/s/mm

高速DRAM接口电感耦合注入锁定CDR高数据速率单位面积效率

▸采用电感耦合的注入锁定CDR技术

▸数据速率提升至30 Gb/s/链路

▸单位面积数据速率达2.2 Tb/s/mm

Abstract

This paper presents a 30 Gb/s/link 2.2 Tb/s/mm in- ductive-coupling link for a high-speed DRAM interface. The data rate per layout area is the highest among DRAM interfaces re- ported up to now. The proposed interface employs a high-speed injection-locking CDR technique t hat utilizes the derivative prop- erty of inductive coupling. Compared to conventional injection- l o c k i n gC D Rb a s e do na nX O Re d g edetector, the proposed tech- nique doubles the operation speed and increases the dat