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A 90 nm CMOS V-Band Low-Noise Active Balun With Broadband Phase-Correction Techn
90纳米CMOS工艺下采用宽带相位校正技术的V波段低噪声有源巴伦设计
63GHz下电压增益17.6dB,噪声系数8.6dB,功耗19mW@1.4V
有源巴伦相位校正毫米波低噪声放大器CMOS
▸宽带相位校正技术(PCT)有效减少相位偏差
▸技术对频率不敏感,适用于毫米波频段
▸有源巴伦电路可兼作低噪声放大器
Abstract
This paper presents a V-band low-noise active balun
with broadband phase-correction technique (PCT). The proposed
technique effectively mitigates the phase deviation of active balun
caused by parasitic imbalance and circuit mismatch. This tech-
nique is insensitive to frequenc y, which makes the operation fre-
quency of active balun with the PCT can be extended to millimeter-
wave (MMW) band. Within the low noise current-reuse pre-ampli-
fier, this active balun circuit can be employed as low-nois