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JSSC 2011第11期mm-Wave90nm

A 90 nm CMOS V-Band Low-Noise Active Balun With Broadband Phase-Correction Technique

90纳米CMOS工艺下采用宽带相位校正技术的V波段低噪声有源巴伦设计
63GHz下电压增益17.6dB,噪声系数8.6dB,功耗19mW@1.4V
有源巴伦相位校正毫米波低噪声放大器CMOS
宽带相位校正技术(PCT)有效减少相位偏差
技术对频率不敏感,适用于毫米波频段
有源巴伦电路可兼作低噪声放大器
Abstract
This paper presents a V-band low-noise active balun with broadband phase-correction technique (PCT). The proposed technique effectively mitigates the phase deviation of active balun caused by parasitic imbalance and circuit mismatch. This tech- nique is insensitive to frequenc y, which makes the operation fre- quency of active balun with the PCT can be extended to millimeter- wave (MMW) band. Within the low noise current-reuse pre-ampli- fier, this active balun circuit can be employed as low-noise amplifier as well. The measured phase error keeps less than 10 degrees from 50 GHz to 67 GHz, which demonstrates the robust calibration of phase error at MMW frequency. The measured voltage gain and noise figure at 63 GHz are 17.6 dB and 8.6 dB, respectively. The core power consumption is 19 mW from 1.4 V supply voltage with a core area of 0.275 mm .