JSSC 2011第11期Other

Patent Abstracts The Patent Abstracts and References cited are intended to provide the minimum information necessary for determining interest. The full text and images can be obtained from the U.S. Patent Of ﬁce at http://www.uspto.gov. 7,910,992 March 22, 2011 Vertical MOSFET With Through-Body Via for Gate Inventors: Ahmad Ashrafzadeh (Morgan Hill, CA) Assignee: Maxim Integrated Products, Inc. (Sunnyvale, CA) Filed: July 15, 2008.

提出一种具有贯穿体通孔的垂直MOSFET结构，用于提高功率芯片性能。

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垂直MOSFET贯穿体通孔功率芯片半导体电耦合

▸创新点1：垂直MOSFET结构设计（方法创新），通过将MOSFET的源极和漏极垂直堆叠，显著减小了芯片面积并提高了功率密度，适用于高集成度功率器件。

▸创新点2：贯穿体通孔技术（工艺创新），在半导体体内形成垂直于表面的通孔，直接连接源极与栅极结构，降低了寄生电阻和电感，提升了开关速度和能效。

▸创新点3：源极与漏极的电耦合优化（电路创新），通过共平面设计和导电外壳短路连接，优化了电流路径分布，减少了导通损耗，同时增强了散热性能。

▸创新点4：双垂直MOSFET集成（系统创新），将两个垂直MOSFET以共平面方式集成在同一芯片上，实现了对称布局，降低了互连复杂度并提高了系统可靠性。

Abstract

rmining interest. The full text and images can be obtained from the U.S. Patent Of ﬁce at http://www.uspto.gov. 7,910,992 March 22, 2011 Vertical MOSFET With Through-Body Via for Gate Inventors: Ahmad Ashrafzadeh (Morgan Hill, CA) Assignee: Maxim Integrated Products, Inc. (Sunnyvale, CA) Filed: July 15, 2008. Current US Class: 257/341; 257/330; 257/621; 257/E29.257; 257/E29.262 Current International Class: H01L 29/76 (20060101) Field of Search: 257/341,330,621, E29.257,E29.262 U.S. Patent Docume