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JSSC 2011第12期Data Converters90nmDAC

A 12-Bit 125-GSs DAC in 90 nm CMOS With 6270 dB SFDR up to 500 MHz Wei-Hsin Tsen

采用90nm CMOS工艺的12位125GS/s DAC,通过DRRZ操作和紧凑电流单元设计提升动态性能。
12位分辨率,125GS/s采样率,SFDR>70dB@500MHz,DNL 0.5LSB,INL 1.2LSB,128mW功耗
数模转换器电流导向随机归零背景校准高动态范围
数字随机归零(DRRZ)操作:该方法创新通过随机化归零时序,有效降低时钟馈通和开关噪声,提升动态性能(SFDR >70 dB至500 MHz),解决了高频信号下的非线性失真问题。
紧凑电流单元设计:电路创新采用优化的版图布局和匹配技术,在90 nm工艺下实现高密度集成(1100×750 μm²),同时保证电流源匹配性(DNL 0.5 LSB/INL 1.2 LSB)。
电流单元背景校准技术:系统创新通过DRRZ机制实时监测并校准电流源失配,无需中断正常操作即可维持静态线性度(INL 1.2 LSB),显著提升长期稳定性。
混合供电架构:电路创新结合1.2V与2.5V双电源设计(总功耗128 mW),优化了高速开关与电流源headroom的权衡,兼顾能效与动态范围。
Abstract
Member , IEEE Abstract—A current-steering digital-to-analog converter (DAC) was fabricated using a 90 nm CMOS technology. Its dynamic per- formance is enhanced by adopting a digital random return-to-zero (DRRZ) operation and a compact current cell design. The DRRZ also facilitates a current-cell background calibration technique that ensures the DAC static linearity. The measured differential nonlinearity (DNL) is 0.5 LSB and the integral nonlinearity (INL) is 1.2 LSB. At 1.25 GS/s sampling rate