← 返回 JSSC 论文列表JSSC 2012第1期Digital Circuits28nm
A 28 nm 06 V Low Power DSP for Mobile Applications Nathan Ickes Member IEEE Gor
28纳米0.6V低功耗DSP设计，适用于移动设备宽电压范围操作。
28nm CMOS, 1.0V至0.6V, 4-issue VLIW DSP SoC
低功耗移动设备宽电压范围统计静态时序分析DSP
▸宽电压范围操作（1.0V至0.6V）
▸优化的单元库和SRAM设计
▸新型统计静态时序分析方法（SSTA）
Abstract
Processors for next generation mobile devices will
need to operate across a wide supply voltage range in order to
support both high performance and high power efficiency modes
of operation. However, the effects of local transistor threshold
/40
/41variation, already a significant issue in today’s advanced
process technologies, and further exacerbated at low voltages,
complicate the task of designing reliable, manufacturable systems
for ultra-low voltage operation. In this paper , we describe a 4-