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A 62 mV 0.13 /22m CMOS Standard-Cell-Based Design Technique Using Schmitt-Trigger Logic Niklas Lotze, Student Member , IEEE
使用施密特触发器结构提升低电压下CMOS电路的导通-截止电流比,实现62mV供电电压的8位乘法器设计。
62mV供电电压, 17.9nW功耗, 5.2kHz工作频率
低电压设计施密特触发器CMOS导通-截止电流比8位乘法器
▸创新点1:采用施密特触发器结构显著提升导通-截止电流比(方法创新)。通过优化触发器设计,在62 mV超低电压下仍保持稳定的输出电平,解决了传统CMOS在低压下电流比急剧劣化的问题,实测显示该结构使电路在84 mV-62 mV范围内全功能工作。
▸创新点2:提出基于标准单元库的超低电压通用逻辑设计方法(系统创新)。通过制定晶体管尺寸、门电路选择和布局规则,无需定制工艺或后硅调谐(如体偏置),仅需设计施密特触发器标准单元库即可兼容常规数字工具链,实现了22nm CMOS工艺下62 mV的最低工作电压。
▸创新点3:实现无工艺调谐的超低压电路设计(电路创新)。在未使用工艺优化或后硅调谐技术的情况下,通过纯电路结构创新使8x8位乘法器在62 mV电压下功耗低至17.9 nW(5.2 kHz频率),为能量受限应用提供了可量产的解决方案。
▸创新点4:提出面向低压优化的版图设计规则(方法创新)。通过分析泄漏电流路径,制定特定布局约束条件,进一步降低施密特触发器单元在亚阈值区的静态功耗,支撑了62 mV极限电压下的功能稳定性。
Abstract
Supply voltage reduction beyond the minimum energy per operation point is advantageous for supply voltage constrained applications, but is limited by the degradation of on-to-off current ratios with decreasing supply. In this work, we show that the effective on-to-off ratio can be considerably improved by the use of Schmitt Trigger structures, which effec- tively reduce the leakage from the gate output node and thereby stabilize the output level. A method for applying this concept to general logic is presented. Design rules concerning transistor sizing, gate selection and layout necessary to further minimize the required supply voltage are outlined and applied to the design of a chip implementing 8 8 bit multipliers as test structures. The only custom design step is the creation of the Schmitt Trigger standard-cell library, otherwise a regular digital tool chain is used. The multipliers exhibit full functionality down to supply voltages of 84 mV–62 mV , depending on the area overhead invested. No process or post-silicon tuning like body biasing is used. At the minimum possible supply voltage of 62 mV , a power consumption of 17.9 nW at an operation frequency of 5.2 kHz is measured for an 8 8 bit multiplier.