JSSC 2012第2期Analog Circuits0.35μm CMOSOp-AmpBandgap Reference

A Novel Wide-Temperature-Range 39 ppm C CMOS Bandgap Reference Circuit

提出一种新型宽温度范围CMOS带隙基准电路，温度系数低至39 ppm/°C。

3.9 ppm/°C (165°C范围), 13.7 ppm/°C (200°C范围), 0.039% V线性调整率

带隙基准曲率补偿宽温度范围CMOS低温度系数

▸创新的曲率补偿方法：通过引入第二运放生成CTAT电流，实现了更精确的温度补偿，使得在-15°C至150°C范围内温度系数低至3.9 ppm/°C，显著提升了宽温度范围内的稳定性。

▸使用多晶硅电阻实现补偿：采用标准CMOS工艺中的多晶硅电阻进行补偿，简化了工艺复杂度并降低了成本，同时保持了高精度（温度系数13.7 ppm/°C，扩展至-50°C至150°C）。

▸采用第二运放生成CTAT电流：通过额外的运放电路生成与温度成反比的电流（CTAT），进一步优化了传统带隙基准的曲率补偿效果，提升了整体电路的线性度和温度适应性。

▸优异的电源电压调节性能：电路在宽电源电压范围内表现出极佳的线性调节性能，室温下实测线性调节率为0.039%/V，适用于低功耗和高稳定性应用场景。

Abstract

This paper presents an innovative CMOS Bandgap Reference Generator topology that leads to an improved curvature compensation method over a very wide temperature range. The proposed design was implemented in a standard 0.35 mC M O S process. The compensation is perfo rmed by using only poly-silicon resistors. This is achieved by using a second Op-amp that gener- ates a CTAT current, which is subsequently used to enhance the curvature compensation method. The performance of the circuit was veriﬁed