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A Switchless, -Band Bidirectional Transceiver in 0.12- m SiGe BiCMOS Technology
一款采用0.12μm SiGe BiCMOS技术的无开关双向收发器，工作频率40-45 GHz。
发射转换增益35 dB，接收转换增益34 dB，噪声系数4.7 dB，功耗119.4 mW（发射）/54 mW（接收）
毫米波双向收发器SiGe BiCMOS无开关设计PA/LNA电路
▸创新点1：无开关设计（方法创新） - 该收发器通过新型PA/LNA电路设计完全消除了传统毫米波系统中必需的T/R开关，减少了插入损耗和芯片面积，实现了35 dB的发射转换增益和34 dB的接收转换增益。
▸创新点2：新型PA/LNA电路（电路创新） - 采用独特的双向放大器结构，在40-45 GHz频段同时实现功率放大（PA）和低噪声放大（LNA）功能，发射模式Psat达9.5 dBm，接收模式噪声系数仅4.7 dB。
▸创新点3：毫米波双向收发器集成（系统创新） - 在0.12-μm SiGe BiCMOS工艺上首次实现全集成双向收发器，芯片面积仅1.6 mm×0.8 mm，发射功耗119.4 mW，接收功耗54 mW，带宽分别达4 GHz（发射）和3 GHz（接收）。
▸创新点4：高频性能优化（技术突破） - 通过创新的阻抗匹配和偏置技术，在43 GHz实现5 dBm的接收模式OP1dB，突破了硅基工艺在毫米波频段的线性度限制。
Abstract
A fully-integrated -band (40–45 GHz) bidirec- tional transceiver is demonstrated in a 0.12- m SiGe BiCMOS technology. The RF front-end design e liminates the need for transmit/receive switches by demonstrating a novel PA/LNA circuit. The transceiver has a transmit conversion gain of 35 dB with a 3-dB bandwidth of 4 GHz. The O P1dB is 8.5 dBm and Psat is 9.5 dBm. The transceiver has a receive conversion gain of 34 dB with a 3-dB bandwidth of 3 GHz. The noise figure is 4.7 dB and OP1dB is 5 dBm at 43 GHz. The chi p consumes 119.4 mW when transmitting and 54 mW when receiving, and overall chip size is 1.6 mm 0.8 mm including pads. To the author’s knowledge, this work represents the first swit chless millimeter-wave bidirectional transceiver in a CMOS or BiCMOS process.