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A 10 Gbs 45 mW Adaptive 60 GHz Baseband in 65 nm CMOS Chintan Thakkar Student Me
65纳米CMOS工艺下实现10Gbps低功耗60GHz基带设计
10 Gb/s, 45 mW (adaptation off), 53 mW (adaptation on)
60 GHz基带低功耗CMOS自适应
▸创新点1：混合信号自适应基带设计，通过集成可变增益放大器、模拟相位旋转器和自适应硬件，实现了高效的信号处理，显著降低了功耗，核心信号处理电路仅消耗29 mW。
▸创新点2：集成40系数I/Q决策反馈均衡器（DFE），有效补偿了信道失真，提高了信号传输的准确性和稳定性，支持10 Gb/s的高速数据传输。
▸创新点3：低功耗时钟生成与数据恢复电路，优化了时钟同步和数据恢复的效率，整体功耗在自适应开启时为53 mW，关闭时为45 mW，显著提升了能效比。
▸创新点4：采用65 nm CMOS工艺，实现了高集成度和低功耗的设计，为60 GHz基带通信系统提供了高效的硬件解决方案。
Abstract
This paper presents a low-power mixed-signal adap-
tive 60 GHz baseband in 65 nm CMOS. The design integrates vari-
able gain ampli fiers, analog pha se rotator, 40-coef ficient I/Q de-
cision feedback equalizers (DFEs), clock generation and data re-
covery circuits, and adaptation hardware. The baseband achieves
10 Gb/s operation with
while consuming 53 mW
(adaptation on)/45 mW (adaptation off), of which the core signal
processing circuits consume only 29 mW.