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A 12.8-Gb/s/link Tri-Modal Single-Ended
一款支持三模式、12.8Gbps单端信号传输的内存接口控制器
12.8 Gbps, 5.0 mW/Gbps
内存接口单端信号GDDR5DDR3CMOS
▸创新点1:三模式不对称内存控制器,支持12.8 Gbps单端信号传输,兼容GDDR5和DDR3内存,无需更改封装,显著提升系统灵活性。
▸创新点2:紧凑型电压模式驱动器,配备1-tap预加重技术,有效减少写入方向的符号间干扰,提升信号完整性。
▸创新点3:供应噪声跟踪方案,通过跟踪电源噪声,减少参考电压噪声,提高接收器前端抗干扰能力。
▸创新点4:全局时钟分布方案,结合三VCO PLL,支持宽频操作,降低功耗,实现高效时钟管理。
Abstract
This paper presents a tri-modal asymmetric memory controller interface that achiev es 12.8-Gbps single-ended (SE) signaling over stripline FR4 traces. The controller can be con- figured to communicate with commercially available GDDR5 and DDR3 memories at 6.4 and 1.6 Gbps, respectively, with no package change. The interface is equippe d with a compact voltage-mode driver with 1-tap pre-emphasis, in the WRITE direction, and a linear equalizer (LEQ) and 1 - t a pd e c i s i o nf e e d b a c ke q u a l - izer (DFE), in the READ direction, to compensate for channel inter-symbol interference (ISI). The receiver front-end contains a supply noise tracking scheme to mitigate reference voltage (VREF) noise. A tri-VCO PLL and an ef ficient global clock distri bution scheme support a wide range of o perating frequencies at low power consumption. Finally, the interface also incorporates two overhead links per byte for data-bus encoding (DBE) e xperiments to mitigate simultaneous switching noise (SSN). Implemented in a 40-nm CMOS process, the 16 tri-modal interface achieves an energy ef ficiency of better than 5.0 mW/Gbps pe r data link at 12.8 Gbps.