← 返回 JSSC 论文列表
📄 下载 JSSC 原文 PDF
JSSC 2012第4期RF & Wireless32nm

A 26 mWGbps 125 Gbps RX With 8-Tap Switched-Capacitor DFE in 32 nm CMOS Thomas T

32nm SOI CMOS工艺下的低功耗接收器电路,采用8抽头开关电容DFE,支持12.5 Gbps数据传输。
32nm CMOS, 1.1V, 12.5 Gb/s, 2.6 mW/Gbps
低功耗接收器开关电容DFESOI CMOS源同步链路线性均衡器
采用开关电容(SC)技术实现8抽头判决反馈均衡器(DFE)
仅在接收端实现线性均衡器,避免使用发射前馈均衡器(TX-FFE)
数字式电路实现,布局紧凑
Abstract
A low-power receiver circuit in 32 nm SOI CMOS is p r e s e n t e d ,w h i c hi si n t e n d e dt ob eu s e di nas o u r c e - s y n c h r o n o u s link con figuration. The design of the receiver was optimized for power owing to the assumption that a link protocol enables a periodic calibration during which the circuit does not have to deliver valid data. In addition, it is shown that the transceiver power and the effect of high-freq uency transmit jitter can be reduced by implementing a linear