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JSSC 2012第4期Memory40nmSRAM

Compact Measurement Schemes for Bit-Line Swing Sense Amplifier Offset V oltage an

提出了一种紧凑的测量方案,用于直接测量位线电压摆动、感应放大器偏移电压和字线脉冲宽度。
40 nm CMOS, 32 kb SRAM macro, 2% area penalty
位线电压摆动感应放大器偏移电压字线脉冲宽度SRAMCMOS
首次实现根据在位测量结果优化字线脉冲宽度
消除了传统上所需的位线电压摆动额外裕量
为更激进的字线脉冲宽度处理提供了可能性
Abstract
This paper proposes schemes for the direct measure- ment of bit-line (BL) voltage swing, sense ampli fier (SA) offset voltage, and word-line (WL) pul se width, demonstrated in a 40 nm CMOS 32 kb fully functional SRAM macro with 2% area penalty. This is the first such scheme to enable the optimal tuning of WL-pulse (WLP) width accord i n gt oo n - s i t em e a s u r e m e n t results for BL voltage swing, dynamic read stability, and write margin, all of which depend on WLP width. It also eliminates