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Isolation Techniques Against Substrate Noise Coupling Utilizing Through Silicon
通过硅通孔技术提升射频电路与数字电路间的隔离性能
30 dB和40 dB隔离改善（分别在100 MHz和1 GHz）
硅通孔隔离技术衬底噪声射频电路SoC
▸创新点1：采用TSV工艺实现射频电路隔离，通过将TSV与接地的第一层金属连接，显著提升数字电路与射频电路之间的隔离效果，避免了传统上芯片互联的限制。
▸创新点2：结合DTI和高阻层提升隔离效果，通过组合TSV、DTI和高阻层技术，实现了高达60 dB的隔离性能改进，远超传统隔离技术如保护环、Deep N-well和DTI。
▸创新点3：提出简化的噪声分布分析模型，利用网格电路模型详细模拟噪声分布，为隔离技术的设计和优化提供了理论依据和仿真支持。
▸创新点4：验证了H形TSV结构在100 MHz和1 GHz频率下的隔离性能，分别实现了30 dB和40 dB的改进，展示了TSV工艺在高频应用中的优越性。
Abstract
The isolation techniques against substrate noise cou-
pling utilizing through silicon via (TSV) process are described. The
trench shape TSV encloses the RF circuit on a SoC chip to improve
the isolation between digital circuits and the RF circuits without
constraints of on-chip interconnect above first metal as the TSV is
connected to the grounded 1st metal from the back side of the sub-
strate. The analysis with simpli fied model is proposed to show the
effect of the proposed isolation techniques