← 返回 JSSC 论文列表JSSC 2012第5期RF & Wireless0.15微米
Digitally-Controlled Polar Transmitter Using a Watt-Class Current-Mode Class-D CMOS Power Ampli fier and Guanella Reverse Balun for Handset Applications Toshifumi Nakatani, Student Member , IEEE,J e r e m y R o d e, Member , IEEE, Donald F. Kimball , Member , IEEE
本文展示了一种数字控制的极性发射器,采用瓦级电流模式D类放大器,在0.15微米RF CMOS工艺中实现高效率和高输出功率。
31dBm输出功率,51%漏极效率,0.75GHz频率,26.5%整体效率
数字控制极性发射器电流模式D类瓦级功率CMOS
▸使用堆叠FET的电流模式D类配置以提高击穿电压和效率
▸采用环形Guanella反向巴伦实现1:4阻抗变换且插入损耗低于1dB
▸数字脉宽调制与3GHz时钟同步的降压转换器供电
Abstract
A digitally-controlled pola rt r a n s m i t t e rw i t ha watt-class CMOS power ampli fier is demonstrated, implemented in a 0.15 m RF CMOS process. Stacked FETs in a current-mode class-D con figuration are used to obt ain high breakdown voltage a n dh i g he fficiency in the output stage, and a doughnut-shaped Guanella reverse balun is applie d to achieve a 1-to-4 impedance transformation with less than 1 dB insertion loss. The ampli fier has 31 dBm output power with 51% drain ef ficiency at 0.75 GHz frequency under single tone testing. The output stage is fed by a buck converter employing d igital pulsewidth modulation with 47 MHz pulse rate synchronized with a 3 GHz clock. Digital compensation techniques were de veloped to maintain linearity. WCDMA HPSK modulation was demonstrated using a pulse pattern generator-based measurement bench. Overall ef ficiency of 26.5% was achieved while maintaining ACLRs within 3GPP specifications at 24 dB m average output power.