JSSC 2012第5期RF & Wireless40nm/130nm

MA Y 2012 VOLUME 47 NUMBER 5 IJSCBC ISSN 0018-9200 New Associate Editors U Mo

该期刊论文聚焦于2011年射频集成电路（RFIC）研讨会的特别章节，涵盖了从可靠性建模到低功耗电路设计的多个前沿研究。

40nm CMOS, 130nm CMOS, 5.6 GHz to 11.5 GHz DCO

射频集成电路CMOS功率放大器低噪声放大器数字控制振荡器

▸40纳米MOSFET在射频应力下的老化性能预测模型

▸适用于认知无线电系统的30MHz–2.4GHz CMOS接收器设计

▸130纳米CMOS工艺下的无电感低噪声放大器（LNA）双增强技术

▸数字控制极化发射器在手机应用中的使用

▸全集成高效CMOS逆D类功率放大器设计

Abstract

CTION ON THE 2011 RADIO FREQUENCY INTEGRA TED CIRCUITS (RFIC) SYMPOSIUM Overview for the Special Section on the 2011 Radio Frequency Integrated Circuits (RFIC) Symposium ... .... G . Boeck 1073 Reliability Characterization and Modeling Solution to Predict Aging of 40-nm MOSFET DC and RF Performances Induced by RF Stresses ..... . . . . . L. Negre, D. Roy, F . Cacho, P . Scheer , S. Jan, S. Boret, D. Gloria, and G. Ghibaudo 1075 A 30-MHz–2.4-GHz CMOS Receiver With Integrated RF Filter and Dynamic