← 返回 JSSC 论文列表JSSC 2012第6期RF & Wireless0.18μm SiGe BiCMOSVCO
A Push-Push VCO With 139-GHz Wide Tuning Range Using Loop-Ground Transmission Li
采用0.18μm SiGe BiCMOS技术设计的59GHz推挽式压控振荡器，具有139GHz宽调谐范围和低相位噪声。
输出功率+1.5dBm，调谐范围13.9GHz(26%)，相位噪声-108dBc/Hz@1MHz偏移
压控振荡器推挽式毫米波环地传输线相位噪声
▸使用环地传输线(LG-TML)结构
▸同时输出二次谐波大信号和基频信号
▸抑制HBT的米勒效应和负导降低
Abstract
A 59-GHz push-push voltage-controlled oscillator
(VCO)—based on 0.18- m SiGe BiCMOS technology—for a
full-band 60-GHz transceiver w as developed. The VCO uses a
loop-ground transmission line (LG-TML) compose do f
signal lines (half wavelength at fundamental frequency) and
secondary lines (quarter wavelength at second harmonic
frequency). The LG-TML makes it possible to outp ut both a
large signal at second harmonic frequency and an adequate signal
at the fundamental frequency for driving a presc