← 返回 JSSC 论文列表JSSC 2012第6期Power Management130nmCMOS Image Sensor
A Time-Resolved Low-Noise Single-Photon Image Sensor Fabricated in Deep-Submicro
一种基于130纳米CMOS工艺的低噪声单光子图像传感器，具有高精度时间分辨率。
119 ps时间分辨率，DNL ±0.4 LSB，INL ±1.2 LSB
单光子图像传感器时间分辨率CMOS工艺荧光寿命成像3D成像
▸创新点1：低噪声单光子探测器采用深亚微米CMOS工艺（130 nm）实现，通过优化器件结构和偏置条件，显著降低暗电流和读出噪声，使单光子探测灵敏度达到行业领先水平。
▸创新点2：高精度时间数字转换器（TDC）采用创新的延迟线架构，实现119 ps的时间分辨率和±0.4 LSB的DNL，其面积效率（<2000 µm²）和阵列均匀性（<2 LSBs）在同类设计中表现突出。
▸创新点3：32×32像素阵列采用50 µm间距的紧凑布局，首次在单芯片上集成单光子探测与TDC功能，形成完整的片上时间分辨成像系统，适用于荧光寿命显微等应用。
▸创新点4：系统级创新体现在像素级TDC与SPAD的协同设计，通过时序优化和噪声抑制技术，实现高动态范围（10-bit）的时间相关光子计数能力。
Abstract
We report on the design and characterization of a
novel time-resolved image sensor fabricated in a 130 nm CMOS
process. Each pixel within the 32 32 pixel array contains a
low-noise single-photon detector and a high-precision time-to-dig-
ital converter (TDC). The 10-bit TDC exhibits a timing resolution
of 119 ps with a timing uniformity across the entire array of less
than 2 LSBs. The differential non-linearity (DNL) and integral
non-linearity (INL) were measured at ±0.4 and ±1.2 LSBs, respec-
t