▸创新点1：提出了一种1-V工艺不敏感的电流可扩展两级运算放大器，通过创新的补偿技术实现了增强的直流增益和稳定行为，适用于65-nm数字CMOS工艺。
▸创新点2：采用了类似但未引用的补偿技术，通过分长度晶体管（split-length transistors）进行CMOS运算放大器的补偿，优化了电路的性能和稳定性。
▸创新点3：通过工艺不敏感的设计方法，显著提高了电路在不同工艺条件下的鲁棒性和一致性，适用于大规模生产。
▸创新点4：在两级运算放大器的设计中，通过创新的电流可扩展技术，实现了在低电压（1-V）下的高性能操作，适用于低功耗应用场景。
Abstract
ing
Behavior in 65-nm Digital CMOS”
Mohammad Taherzadeh-Sani and Anas Hamoui
In [1, Sec. III-A], paper [2], which presents a similar compensation
technique to that presented in [1, Sec. III-A], should have been cited.
Manuscript received March 02, 2012; a ccepted March 26, 2012. Date of cur-
rent version May 22, 2012.
The authors are with the Department of Electrical and Computer Engineering,
McGill University, Montreal, QC H3A 0G4 Canada.
Digital Object Identi fier 10.1109/JSSC.2012.2193516
The