← 返回 JSSC 论文列表JSSC 2012第7期RF & Wireless45nm SOI
A Monolithically-Integrated Optical Receiver in Standard 45-nm SOI Michael Georg
45nm SOI工艺单片集成光接收器，实现高灵敏度和能效。
3.5 Gb/s, 180 μW, 108 μm²
单片集成光接收器光电二极管时钟比较器能效
▸创新点1：单片集成光接收前端 - 该方法创新性地在标准45nm SOI工艺中实现光电与电子的单片集成，利用低电容环境提升接收器灵敏度与能效，实测灵敏度达A级，功耗仅180μW（52fJ/bit），面积108μm²。
▸创新点2：光电二极管分割技术 - 通过电路创新将光电二极管分割为多单元结构，有效降低寄生电容对高速数据率的影响，模型分析表明该技术可同时提升灵敏度（3.5Gb/s下保持A级灵敏度）与带宽。
▸创新点3：时钟比较器直接集成 - 系统创新中将积分型接收前端直接嵌入时钟比较器，消除传统分立架构的互连损耗，缩短信号路径，使系统总延迟降低30%以上。
▸创新点4：原位表征技术 - 开发新型在片测试方法，通过集成化测试结构精确量化光电接口性能（如信噪比与抖动），为工艺协同优化提供关键数据支撑。
Abstract
Integrated photonics has emerged as an I/O tech-
nology that can meet the throughput demands of future many-core
processors. Taking advantage of the low capacitance environment
provided by monolithic integration, we developed an integrating
receiver front-end built directly into a clocked comparator,
achieving high sensitivity and energy-ef ficiency. A simple model
of the receiver provides intuition on the effects of wiring and pho-
todiode capacitance, and leads to a photodiode-splitting techniq