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JSSC 2012第7期RF & Wireless130nm/0.14μm/160nm

Introduction to the Special Issue on the 37th European Solid-State Circuits Conf

本期特刊收录了ESSCIRC 2011会议中的优秀论文,涵盖模拟电路、数据转换器、RF通信等传统主题。
130nm CMOS, 200nA, 2.5%未调整偏差; 0.14μm CMOS, 3.4W; 160nm CMOS, 16MHz, ±0.1%频率误差
模拟电路电压基准D类放大器频率参考CMOS
反向带隙电压基准实现极低功耗操作
数字输入D类音频放大器简化接口设计
基于热扩散的频率参考实现高精度
Abstract
ssue is dedicated to some of the best papers from ESSCIRC 2011 held in Helsinki, Finland. Papers in this issue cover the traditional ESSCIRC topics of analog circuits; data converters; RF an d communications; sensors and sensor interfaces; and digital, memory and data recovery. The papers are brie fly introduced in Sections II–VI. II. A NALOG In the first paper of this section, Ivanov et al. present the re- verse bandgap voltage reference that employs very low power operation. A prototype implemen