← 返回 JSSC 论文列表JSSC 2012第9期Data Converters0.7μm CMOSNeural Network Accelerator
A 20-b 40-mV Range Read-Out IC With 50-nV Offset and 0.04% Gain Error for
一款20位精度、40mV量程的桥式传感器读出IC,具有50nV偏移和0.04%增益误差。
20位精度, 40mV量程, 50nV偏移, 0.04%增益误差, 140dB CMRR, 0.7ppm/°C增益漂移
桥式传感器读出IC电流反馈仪表放大器斩波技术动态元件匹配
▸电流反馈仪表放大器(CFIA)结合斩波技术降低偏移和噪声
▸动态元件匹配提高增益精度和漂移
▸数字辅助校正环进一步降低增益漂移
Abstract
This paper presents a 20-b read-out IC with 40-mV full-scale range that is intended for use with bridge transducers. It consists of a current-fee dback instrumentation ampli fier (CFIA) followed by a switched-capacitor incremental ADC. The CFIA’s offset and noise are mitigated by chopping, while its gain accuracy and gain d rift are improved by applying dynamic element matching to its input and feedback transconductors. Their mismatch is reduced by a digitally assisted correction loop, which further reduce s the CFIA’s gain drift. Finally, bulk-bi- asing and impedance-balancing techniques are used to reduce the common-mode dependency of these transconductors, which would otherwise limit the achievable gai n accuracy. The com- bination of these techniques enables the read-out IC to achieve 140-dB CMRR, a worst-case gain error of 0.04% over a 0–2.5 V common-mode r ange, a maximum gain drift of 0.7 ppm/ Ca n d an INL of 5 ppm. After applying nested-chopping, the read-out IC achieves 50-nV offset, 6-nV/ C offset drift, a thermal noise floor of 16.2 nV/ Hza n da0 . 1 - m H z noise corner. Implemented in a0 . 7 - m CMOS technology, the protot ype read-out IC consumes 270 Af r o ma5 - Vs u p p l y .