← 返回 JSSC 论文列表JSSC 2012第9期RF & WirelessSiGe bipolarVCORadar
A Low-Power Wideband Transmitter Front-End Chip for 80 GHz FMCW Radar Systems With Integrated 23 GHz Downconverter VCO
一款用于80 GHz FMCW雷达系统的低功耗宽带发射器前端芯片
80 GHz, 100 mA @5V, 68-92.5 GHz调谐范围
80 GHzFMCW雷达低功耗SiGeVCO
▸集成80 GHz VCO和4:1分频器
▸低相位噪声23 GHz本地振荡器
▸低功耗设计(总功耗100 mA @5V)
Abstract
A low-power FMCW 80 GHz radar transmitter front-end chip is presented, which was fabricated in a SiGe bipolar production technology ( GHz, GHz). Additionally to the fundamental 80 GHz VCO [1], a 4:1-frequency divider (up to 100 GHz), a 23 GHz local oscillator (VCO) with a low phase noise of dBc Hz (1 MHz offset), a PLL-mixer and a static frequency divider is in tegrated together with several output buffers. This chip was designed for low power consumption (in total W, i.e., 100 mA at 5 V supply voltage), which is dominated by the 80 GHz VCO due to the demands for high output power ( dBm) and low phase noise (minimum dBc Hz at 1 MHz offset) within the total wide tuning range from 68 GHz to 92.5 GHz ( GHz). Measurements of the double-PLL system at 80 GHz showed a low phase noise of dBc Hz at 10 kHz offset frequency.