JSSC 2012第9期mm-Wave130 nm SiGe-BiCMOS

A Wideband Dual-Path Millimeter-Wave Power Ampliﬁer With 20 dBm Output Power and

一款130 nm SiGe-BiCMOS工艺的毫米波功率放大器，具有20 dBm输出功率和18%的峰值功率附加效率。

20 dBm输出功率, 18% PAE, 10 GHz带宽

毫米波功率放大器SiGe-BiCMOS变压器耦合差分共基增益级自屏蔽变压器

▸差分共基增益级提高击穿电压

▸集电极-发射极中和技术增强反向隔离和稳定性

▸自屏蔽变压器设计降低插入损耗

Abstract

A frequency-scalable, three-stage, transformer- coupled millimeter-wave power ampli ﬁer (PA) is implemented in 130 nm SiGe-BiCMOS. Differential common-base gain stages extend collector-emitter breakdown voltage beyond 3 V , while collector-emitter neutralizatio n increases reverse isolation and stability. Monolithic self-shielded transformers designed for low insertion loss and compact dim ensions on-chip include: a 2:4 input power splitter, a 4:1 output balun combiner and inter-stage coupling t