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JSSC 2012第10期Other亚50nm InP HEMT

220-GHz Solid-State Power Ampli fier Modules Ve s n a R a d i s i c Senior Member

220GHz固态功率放大器模块,峰值输出75mW,四路合成功率达185mW。
60mW@205-225GHz, 75mW@210GHz, 185mW@210GHz(四路合成)
太赫兹功率放大器InP HEMT波导合成固态功率模块
创新点1:八路片上功率合成技术,通过集成多个放大器单元实现高输出功率,显著提升功率效率,达到75 mW峰值输出。
创新点2:WR-4波导功率合成技术,利用波导结构实现高效功率合成,进一步提升输出功率至185 mW,扩展了应用范围。
创新点3:亚50nm InP HEMT晶体管应用,采用先进晶体管技术,提升放大器的高频性能和功率密度,支持220 GHz频段工作。
创新点4:共面波导(CPW)技术与片上电磁波导转换,优化信号传输路径,减少损耗,提高整体系统效率和稳定性。
Abstract
This paper reports on several solid-state power am- plifier (PA) modules operating at frequencies around the 220-GHz propagation window. Included is a single module demonstrating saturated output power 60 mW from 205 to 225 GHz and peak output power of 75 mW at 210 GHz using eight-way on-chip power combining. The output power is fu rther increased by using wave- guide power combining with WR-4 waveguide. Results include a single two-way combined module achieving 100 mW of power from 210 to 225 GH