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JSSC 2012第10期Power Management65nmSRAMDRAM

A 2T1C Embedded DRAM Macro With No Boosted Supplies Featuring a 7T SRAM Based Re

提出一种无需升压电源的逻辑兼容2T1C eDRAM宏单元,采用7T SRAM修复方案
714MHz随机访问频率,161.8µW/Mb静态功耗(1.1V,85°C,500µs刷新周期)
eDRAM2T1C存储单元逻辑兼容自适应刷新SRAM修复
基于常规薄氧化层器件的2T1C增益单元结构
利用PMOS电容实现无升压电源的稳定读写操作
采用7T SRAM的修复方案与自适应刷新率控制
Abstract
A truly logic-compatible gain cell eDRAM macro with no boosted supplies is presented. A 2T1C gain cell implemented only with regular thin oxide devices consists of an asymmetric 2T cell and a coupling PMOS capacitor. The PMOS capaci tor ensures proper operation even without a b oosted supply by utilizing a ben- eficial coupling for read and a preferential boosting for write. A re- pair scheme based on a single-ended 7T SRAM has fe atures such as a local differential write and shared control with