← 返回 JSSC 论文列表JSSC 2012第10期Medical & Bio65nm/0.13µm/0.18µmBandgap Reference
A Portable 2-Transistor Picowatt Temperature- Compensated V oltage Reference Ope
一种便携式2晶体管皮瓦级温度补偿电压基准设计
0.13µm CMOS, 0.5V最低工作电压, 2.22pW功耗, 16.9ppm/°C温度系数
电压基准超低功耗温度补偿CMOS工艺移植
▸2晶体管结构实现超低功耗
▸温度系数优化至16.9 ppm/°C
▸支持多工艺节点移植(65nm/0.13µm/0.18µm)
Abstract
Sensing systems such as biomedical implants, infra-
structure monitoring systems, and military surveillance units are
constrained to consume only picowatts to nanowatts in standby
and active mode, respectively. This tight power budget places
ultra-low power demands on all building blocks in the systems.
This wo rk proposes a voltage reference for use in such ultra-low
power systems, referred to as t he 2T voltage reference, which
has been demonstrated in silicon across three CMOS technolo-
gies.