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JSSC 2012第10期Medical & Bio65nm/0.13µm/0.18µmBandgap Reference

A Portable 2-Transistor Picowatt Temperature- Compensated V oltage Reference Ope

一种便携式2晶体管皮瓦级温度补偿电压基准设计
0.13µm CMOS, 0.5V最低工作电压, 2.22pW功耗, 16.9ppm/°C温度系数
电压基准超低功耗温度补偿CMOS工艺移植
2晶体管结构实现超低功耗
温度系数优化至16.9 ppm/°C
支持多工艺节点移植(65nm/0.13µm/0.18µm)
Abstract
Sensing systems such as biomedical implants, infra- structure monitoring systems, and military surveillance units are constrained to consume only picowatts to nanowatts in standby and active mode, respectively. This tight power budget places ultra-low power demands on all building blocks in the systems. This wo rk proposes a voltage reference for use in such ultra-low power systems, referred to as t he 2T voltage reference, which has been demonstrated in silicon across three CMOS technolo- gies.