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JSSC 2012第10期Data Converters40nmSAR ADC

A Single-Channel, 1.25-GS/s, 6-bit, 6.08-mW Asynchronous Successive-Approximation ADC With Improved Feedback Delay in 40-nm CMOS Tao Jiang,S t u d e n tM e m b e r ,I E E E, Wing Liu, Freeman Y . Zhong, Charlie Zhong

40纳米CMOS工艺下单通道异步逐次逼近ADC,实现1.25GS/s采样率与低功耗
6-bit 1.25GS/s 6.08mW 178fJ/conv-step
异步SAR ADC多量化器高速低功耗电容DAC比较器延迟优化
采用多量化器结构替代传统单量化器
异步纹波时钟消除数字逻辑延迟
电容DAC建立时间与比较器量化延迟决定采样速率
Abstract
A single-channel, asynch ronous successive-approx- imation (SA) ADC with improved feedback delay is fabricated in 40 nm CMOS. Compared with a conventional SAR structure that employs a single quantiz er controlled by a digital feedback logic loop, the proposed SAR-ADC employs multiple quantizers for each conversion bit, clocked by an asynchronous ripple clock that is generated after eac h quantization. He nce, the sampling rate of the 6-bit ADC is limited only by the six delays of the Ca- pacitive-DAC settling and each comparator’s quantization delay, as the digital logic de lay is eliminated. Measurement results of the 40 nm-CMOS SAR-ADC achieves a peak SNDR of 32.9 dB and 30.5 dB, at 1 GS/s and 1.25 GS/s, consuming 5.28 mW and 6.08 mW, leading to a FoM o f 148 fJ/conv-step and 178 fJ/conv-step, respectively, in a core area less than 170 um by 85 um.