← 返回 JSSC 论文列表JSSC 2012第10期RF & Wireless0.25µmLNA
An 8-W 250-MHz to 3-GHz Decade-Bandwidth Low-Noise GaN MMIC Feedback Ampli fier W
一款8W输出功率、250MHz至3GHz带宽的GaN MMIC反馈放大器，具有高线性度和低噪声。
0.25µm GaN HEMT, 40V 750mA, OIP3 51.9dBm, NF ~3dB
GaN MMIC宽带放大器低噪声放大器高线性度反馈放大器
▸采用GaN HEMT技术实现高输出功率和宽带宽
▸在多种偏置条件下优化噪声系数和线性度
▸性能超越现有PHEMT、HBT和HFET技术
Abstract
This paper describes a GaN monolithic microwave
integrated circuit (MMIC) cascode feedback ampli fier design
which achieves up to 8 W of output power and greater than
+51 dBm OIP3 across a 250–3000-MH z decade bandwidth. The
LNA also achieves 20 dB of flat-gain across the band. The design
was fabricated with a 0.25-µm GaN HEMT technology with an
fT ~ 50 GHz and a BVgd > 60 V. A 40-V 750-mA high-bias LNA
design achieves an OIP3 of 51.9 dBm, P1dB of 38.5 dBm, and
NF ~ 3 dB at 2 GHz. A 40-V 500-mA me