← 返回 JSSC 论文列表JSSC 2012第10期mm-Wave
Common-Gate Load-Pull With Q-Band Application
提出一种毫米波线性功率放大器设计新方法，通过小晶体管负载牵引数据生成大晶体管的本征特性曲线。
1W功耗，21dB增益，OIP3 35dBm，PAE 19%
毫米波功率放大器负载牵引共栅极Q波段
▸将小晶体管负载牵引数据转换为本征器件的共栅极特性曲线
▸通过源-栅和漏-栅曲线组合生成任意大尺寸晶体管的本征漏-源特性
▸在Q波段实现高性能功率放大器设计
Abstract
A new technique is proposed for the design of linear
power ampli fiers at millimeter-wave frequencies where load-pull
of large transistor output cells is dif ficult. The technique trans-
forms the load-pull data on a small, standard foundry transistor
layout to a pair of common-gate conto urs for the intrinsic device;
one source–gate and one drain–gat e. These are recombined as an
intrinsic drain–source contour for a larger and arbitrary transistor
layout. A Q-band driver ampli fier for the ETSI 42